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SB845F PDF预览

SB845F

更新时间: 2024-11-09 09:34:27
品牌 Logo 应用领域
强茂 - PANJIT 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 46K
描述
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SB845F 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AC包装说明:ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.22Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:45 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SB845F 数据手册

 浏览型号SB845F的Datasheet PDF文件第2页 
SB820F SERIES  
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
CURRENT  
VOLTAGE  
20 to 60 Volts  
8 Amperes  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
0.189(4.8)  
0.165(4.2)  
0.406(10.3)  
0.381(9.7)  
0.134(3.4)  
0.118(3.0)  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
0.130(3.3)  
0.114(2.9)  
• Low forward voltage, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
0.114(2.9)  
0.098(2.5)  
0.055(1.4)  
0.039(1.0)  
MECHANICAL DATA  
0.055(1.4)  
0.039(1.0)  
0.028(0.7)  
0.019(0.5)  
• Case: ITO-220AC full molded plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
0.027(0.67)  
0.022(0.57)  
0.100(2.55)  
0.100(2.55)  
• Mounting Position: Any  
• Weight: 0.0655 ounces, 1.859 grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
PARAMETER  
SYMBOL SB820F SB830F SB840F SB845F SB850F SB860F UNITS  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
V
V
V
A
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Current at  
Tc =75OC  
IF(AV)  
8
Peak Forward Surge Current : 8.3 ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
VF  
IR  
150  
A
V
Maximum Forward Voltage at 8.0A  
0.55  
0.75  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
TJ=25OC  
0.2  
50  
mA  
TJ=100OC  
Typical Thermal Resistance  
RJC  
3
OC / W  
OC  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 to +125  
-55 to +150  
TSTG  
-55 to +150  
OC  
NOTE:  
Both Bonding and Chip structure are available.  
PAGE . 1  
August 23,2010-REV.03  

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