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SB8100-E PDF预览

SB8100-E

更新时间: 2024-10-29 12:26:39
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
7页 208K
描述
Schottky Barrier Rectifiers Reverse Voltage 20 to 100V

SB8100-E 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 V最大非重复峰值正向电流:150 A
元件数量:1最高工作温度:150 °C
最大输出电流:5 A最大重复峰值反向电压:100 V
最大反向恢复时间:0.02 µs子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
Base Number Matches:1

SB8100-E 数据手册

 浏览型号SB8100-E的Datasheet PDF文件第2页浏览型号SB8100-E的Datasheet PDF文件第3页浏览型号SB8100-E的Datasheet PDF文件第4页浏览型号SB8100-E的Datasheet PDF文件第5页浏览型号SB8100-E的Datasheet PDF文件第6页浏览型号SB8100-E的Datasheet PDF文件第7页 
SB820-E thru SB8100-E  
Schottky Barrier Rectifiers  
Reverse Voltage 20 to 100V  
Feature & Dimensions  
* Plastic package has underwriters laboratory  
Flammability classification 94V-0  
* Low power loss,high efficiency  
* For use in low voltage high frequency inverters,  
free wheeling,and polarity protection applications  
* Guarding for over voltage protection  
* High temperature soldering guaranteed:  
260°C/10 seconds at terminals  
* IEC61000-4-2 ESD Air Contact≥±15KV  
Mechanical Data  
Case  
: JEDEC DO-201AD, molded plastic over sky die  
Terminals : Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity  
Weight  
: Color band denotes cathode end  
: 0.038oz., 1.03 g  
We declare that the material of product compliance  
with ROHS requirements  
Mounting position : Any  
Handling precautin : None  
1.Maximum & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified  
SB820- SB830- SB840- SB850- SB860- SB880- SB8100-  
Parameter symbol  
Symbol  
Unit  
E
E
E
E
E
E
E
SB820 SB830 SB840 SB850 SB860 SB880 SB8100  
Device marking code  
ESD  
ESD  
ESD  
ESD  
ESD  
ESD  
ESD  
100  
70  
VRRM  
VRSM  
VDC  
Maximum repetitive peak reverse voltage  
Maximum RSM voltage  
20  
30  
40  
50  
60  
80  
V
V
V
14  
21  
28  
35  
42  
56  
Maximum DC blocking voltage  
20  
30  
40  
50  
60  
80  
100  
Maximum average forward rectified current  
0.375" (9.5mm) lead length (See fig. 1)  
5.0  
150  
200  
IF(AV)  
IFSM1  
A
A
A
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
Peak forward surge current 1.0ms single half sine-wave  
superimposed on rated load  
IFSM2  
15  
35  
5
KV  
°C/W  
°C/W  
°C  
Minimum ESD (1.4601.442-01 ESD contact)  
Thermal resistance, junction to ambient  
Thermal resistance, junction to case  
RθJA  
RθJC  
40 to +150  
Operating junction and storage temperature range  
TJ, TSTG  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
SB820- SB830- SB840- SB850- SB860- SB880- SB8100-  
Parameter symbol  
Symbol  
Unit  
E
E
E
E
E
E
E
0.50  
0.70  
0.84  
Maximum instantaneous forward voltage at 5.0A  
VF  
Ir  
V
1
mA  
mA  
mA  
Maximum DC reverse current  
ton=8ms; toff=35ms  
TC = 25°C  
TC = 120°C  
TC = 140°C  
10  
30  
Ir  
ton=8ms; toff=35ms  
Ir  
20  
35  
Maximum reverse recovery time TC = 25°C  
TC = 120°C  
Trr  
CJ  
ns  
500  
380  
Typical junction capacitance at 4.0V, 1MHz  
PF  
Notes:  
1. Thermal resistance from junction to ambient at 0.375(9.5mm) lead length, P.C.B. mounted  

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 100V V(RRM), Silicon, TO-220AB, ROHS CO