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SB620FCT_09 PDF预览

SB620FCT_09

更新时间: 2024-02-04 06:23:35
品牌 Logo 应用领域
强茂 - PANJIT 肖特基二极管分离技术隔离技术
页数 文件大小 规格书
2页 92K
描述
ISOLATION SCHOTTKY BARRIER RECTIFIERS

SB620FCT_09 数据手册

 浏览型号SB620FCT_09的Datasheet PDF文件第2页 
SB620FCT~SB660FCT  
ISOLATION SCHOTTKY BARRIER RECTIFIERS  
6.0 Amperes  
CURRENT  
20 to 60 Volts  
VOLTAGE  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: ITO-220AB full molded plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
.027(.67)  
.022(.57)  
• Mounting Position: Any  
• Weight: 0.055 ounces, 1.5615 grams.  
MAXIMUMRATINGANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SB620FCT SB630FCT SB640FCT SB650FCT SB660FCT  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
Maximum RMS Voltage  
VRMS  
VDC  
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current at Tc =75O  
C
IF(AV)  
IFSM  
VF  
6.0  
75  
A
A
V
Peak Forward Surge Current :8.3ms single half sine-wave  
superimposed on rated load(JEDEC method)  
Maximum Forward Voltage at 3.0A  
0.55  
0.7  
Maximum DC Reverse Current TJ=25O  
C
0.2  
15  
0.1  
15  
IR  
mA  
at Rated DC Blocking Voltage TJ=100O  
C
OC /  
W
Typical Thermal Resistance  
RθJC  
3
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
-55 to +125  
-55 to +150  
-55 to +150  
OC  
OC  
T
STG  
NOTES:  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-APR.27.2009  
1

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