Datasheet > SB5H100

SB5H100

更新时间： 2024-09-22 12:57:11

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	433K
描述
5A Plug-in Schottky diode 100V DO-201 series

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中文翻译

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数据手册

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SB5H100 数据手册

SB5H90 - SB5H100

SCHOTTKY BARRIER RECTIFIER DIODE

VOLTAGE RANGE: 9 0 - 100V

CURRENT: 5.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Mechanical Data

Case: DO-201AD, Molded Plastic

DO-201AD

Min

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

Dim

Max

25.40

7.20

9.50

1.30

5.30

1.20

4.80

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Parameter

Symbol

V_RRM

V_RWM

V_DC

SB5H90

SB5H100

Unit

Maximum repetitive peak reverse voltage

Working peak reverse voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 80°C

I_F(AV)

5.0

200

1.0

Peak forward surge current, 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

I_RRM

Peak repetitive reverse surge current at t_p= 2.0µs, 1KHz

R_θJA

R_θJL

Maximum thermal resistance ⁽²⁾

°C/W

Storage temperature range

T_STG

T_J

–55 to +175

175

°C

Maximum operating junction temperature

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Maximum instantaneous

I_F= 5.0A, T_A= 25°C

I_F= 5.0A, T_A= 125°C

0.80

0.70

V_F

forward voltage at:⁽¹⁾

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

T_A= 125°C

200

µA

I_R

(1)

Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle

(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

1 of 2

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