SB520-SB5A0
Schottky Barrier Rectifiers
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 5.0A
DO - 27
Features
Metal-semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequencyinverters free
wheeling,and polarityprotection applications
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
SB520 SB530 SB540 SB550 SB560 SB570 SB580 SB590 SB5A0 UNITS
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
70
49
70
80
56
80
90
63
90
100
70
V
V
V
VRRM
VRMS
VDC
100
MaximumDC blocking voltage
Maximumaverage forw ard rectified current
5.0
A
IF(AV)
9.5mmlead length,
(see fig.1)
Peak forw ard surge current
8.3ms single half-sine-w ave
IFSM
150.0
A
V
superimposed on rated load @TJ=125
Maximuminstantaneous forw ard voltage
@ 5.0A (Note 1)
0.55
0.7
0.85
VF
IR
Maximumreverse current
@TA=25
2.5
25
mA
pF
at rated DC blocking voltage @TA=100
Typical junction capacitance (Note2)
50.0
500
25.0
400
CJ
RθJA
TJ
Typical thermal resistance
(Note3)
/W
Operating junction temperature range
- 55 ---- + 125
- 55 ---- + 150
Storage temperature range
- 55 ---- +150
TSTG
NOTE: 1. Pulse test:300us pulse width,1% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
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