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SB570-B PDF预览

SB570-B

更新时间: 2024-11-10 03:33:35
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效
页数 文件大小 规格书
3页 51K
描述
5.0A SCHOTTKY BARRIER RECTIFIER

SB570-B 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:70 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Bright Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SB570-B 数据手册

 浏览型号SB570-B的Datasheet PDF文件第2页浏览型号SB570-B的Datasheet PDF文件第3页 
SB570 - SB5100  
5.0A SCHOTTKY BARRIER RECTIFIER  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
·
·
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
A
B
A
High Current Capability  
Surge Overload Rating to 150A Peak  
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
C
D
·
Lead Free Finish, RoHS Compliant (Note 2)  
Mechanical Data  
DO-201AD  
Min  
·
Case: DO-201AD  
Dim  
A
Max  
¾
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
25.40  
7.20  
B
9.50  
1.30  
5.30  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Bright Tin. Plated Leads Solderable per  
MIL-STD-202, Method 208  
1.20  
C
D
4.80  
·
·
·
·
Polarity: Cathode Band  
All Dimensions in mm  
Ordering Information: See Last Page  
Marking: Type Number  
Weight: 1.1 grams (approximate)  
@ T = 25°C unless otherwise specified  
A
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB570  
70  
SB580  
80  
SB590  
90  
SB5100  
100  
Unit  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
V
R
V
RMS Reverse Voltage  
49  
56  
63  
70  
V
A
R(RMS)  
I
Average Rectified Output Current  
@ T = 80°C  
L
5.0  
150  
0.80  
O
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
I
A
FSM  
Forward Voltage  
@ I = 5.0A  
F
V
V
FM  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ T  
=
@ T = 100°C  
25°C  
0.5  
50  
A
I
mA  
RM  
A
C
j
Typical Junction Capacitance  
(Note 1)  
400  
10  
pF  
R
qJA  
K/W  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
T T  
j, STG  
-65 to +150  
°C  
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS30135 Rev. 5 - 2  
1 of 3  
SB570 - SB5100  
www.diodes.com  
ã Diodes Incorporated  

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