Datasheet > SB411D

SB411D

更新时间： 2023-12-06 20:10:54

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	237K
描述
肖特基二极管

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中文翻译

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数据手册

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SB411D 数据手册

SB411D

Silicon Epitaxial Planar Schottky Barrier Diode

for low power rectification and switching power supply

Features

• Small surface mounting type

• High reliability

SOT-23 Plastic Package

1. Anode 2. NC 3. Cathode

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Peak Reverse Voltage

Symbol

V_RM

Value

Unit

DC Reverse Voltage

V_R

Average Rectified Forward Current

I_F(AV)

0.5

Peak Forward Surge Current 8.3 ms Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

-40 to +125

Characteristics at T_a= 25℃

Parameter

Symbol

Typ

Max

Unit

Forward Voltage

at I_F= 10 mA

at I_F= 500 mA

V_F

0.3

0.5

Reverse Current

at V_R= 10 V

I_R

µA

Capacitance Between Terminals

at V_R= 10 V, f = 1 MHz

C_T

1 / 3

Dated : 08/11/2022 Rev:02

12 3

中文翻译

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