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SB330A-E3 PDF预览

SB330A-E3

更新时间: 2024-11-26 14:44:35
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 190K
描述
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode

SB330A-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.63
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

SB330A-E3 数据手册

 浏览型号SB330A-E3的Datasheet PDF文件第2页浏览型号SB330A-E3的Datasheet PDF文件第3页浏览型号SB330A-E3的Datasheet PDF文件第4页 
SB320A thru SB360A  
Vishay General Semiconductor  
New Product  
Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
3.0 A  
20 V to 60 V  
80 A  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Tj max.  
DO-201AD  
Features  
Mechanical Data  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
• Low forward voltage drop  
• High frequency operation  
• 20 KV ESD capability  
Case: DO-201AD  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes the cathode end  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol SB320A SB330A SB340A SB350A SB360A  
Unit  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
3.0  
50  
35  
50  
60  
42  
60  
Maximum RMS voltage  
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at 0.375 (9.5  
mm) lead length (See Fig.1)  
IF(AV)  
Peak forward surge current 8.3 µs single half sine-wave  
superimposed on rated load  
IFSM  
VC  
80  
20  
A
Electrostatic discharge capacitor voltage  
KV  
Human body model air discharge: C = 100 pF, R = 1.5 k  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
Document Number 88925  
14-Jul-05  
www.vishay.com  
1

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