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SB330 PDF预览

SB330

更新时间: 2024-09-24 14:48:07
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 42K
描述
Axial

SB330 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SB330 数据手册

 浏览型号SB330的Datasheet PDF文件第2页浏览型号SB330的Datasheet PDF文件第3页浏览型号SB330的Datasheet PDF文件第4页 
®
SB320 – SB3100  
3.0A SCHOTTKY BARRIER DIODE  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
Guard Ring for Transient and ESD Protection  
Surge Overload Rating to 80A Peak  
Low Power Loss, High Efficiency  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
A
B
A
Mechanical Data  
C
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB320 SB330 SB340 SB350 SB360 SB380 SB3100 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current (Note 1)  
3.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
80  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
CJ  
0.50  
250  
0.75  
180  
0.85  
140  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.5  
20  
Typical Junction Capacitance (Note 2)  
Thermal Resistance, Junction to Ambient (Note 3)  
Thermal Resistance, Junction to Lead (Note 3)  
RθJA  
RθJL  
28  
10  
°C/W  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
-65 to +150  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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