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SB3050 PDF预览

SB3050

更新时间: 2024-09-24 19:43:35
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 二极管
页数 文件大小 规格书
3页 123K
描述
30A, 50V, SILICON, RECTIFIER DIODE,

SB3050 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknown风险等级:5.66
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:700 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM参考标准:IEC-60747-1
最大重复峰值反向电压:50 V最大反向电流:600 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SB3050 数据手册

 浏览型号SB3050的Datasheet PDF文件第2页浏览型号SB3050的Datasheet PDF文件第3页 
SB 3020 ... SB 3065  
Type  
Repetitive Surge peak  
Max.  
Max.  
Max.  
peak  
reverse  
voltage  
reverse  
recovery  
time  
forward  
voltage  
forward  
voltage  
reverse  
voltage  
VRSM  
V
1)  
2)  
3)  
VRRM  
V
trr  
VF  
VF  
ns  
V
V
SB 3020  
SB 3030  
SB 3040  
SB 3050  
SB 3060  
SB 3065  
20  
30  
40  
50  
60  
65  
20  
30  
40  
50  
60  
65  
-
-
-
-
-
-
0.37  
0.37  
0.37  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.65  
0.65  
0.65  
Axial Lead Diode  
Schottky barrier rectifier  
diodes  
Absolute Maximum Ratings  
Forward Current: 30 A  
Symbol Conditions  
Values  
Unit  
Ta = 25 °C, unless otherwise specified  
Reverse Voltage: 20 to 65 V  
SB 3020 ... SB 3065  
Preliminary Data  
R-load, 4), Ta = 50 °C  
f > 15 Hz, 4)  
IFAV  
IFRM  
IFSM  
30  
90  
A
A
tp = 10 ms  
700  
A
half sinus-wave  
Ta = 25 °C  
tp = 8.3 ms  
tp = 10 ms  
tp = 8.3 ms  
A
Features  
Max. solder temperature: 260°C  
Plastic material has UL  
classification 94V-0  
i2t  
2450  
A²s  
A²s  
°C  
°C  
°C  
Ta = 25 °C  
Tj  
Tj  
Tstg  
Operating junction temperature  
DC forward (bypass) mode 5)  
Storage temperature  
-50 ... +150  
-50 ... +200  
-50 ... +175  
Typical Applications*  
• Designed as Bypass Diodes for Solar  
Panels  
• Protection application  
Characteristics  
Mechanical Data  
Symbol Conditions  
Ta = 25 °C, unless otherwise specified  
min.  
typ.  
max.  
Unit  
Plastic case: 8 x 7.5 [mm]  
Weight approx.: 1.5 g  
IR  
IR  
Tj = 25 °C, VR = VRRM  
Tj = 100 °C, VR = VRRM  
600  
µA  
mA  
Terminals: plated terminals  
solderable per MIL-STD-750  
Mounting position: any  
Standard packaging: 500 pieces per  
ammo or 1000 pieces per reel  
35  
-
at 1 MHz and applied reverse voltage  
of 4 V  
Cj  
pF  
L = 60 mH, Tj = 25 °C, inductive load  
ERSM  
-
mJ  
switched off  
Footnotes  
4)  
Rth(j-a)  
Rth(j-L)  
-
K/W  
K/W  
1) IF = - A, IR = - A, IRR = - A  
6)  
2.5  
2) IF = 5A, Tj = 25 °C  
3) IF = 30 A, Tj = 25 °C  
4) Valid, if leads are kept at TA at a distance  
of 0 mm from case  
5) Max. junction temperature Tj 150 °C (VR  
80% VRRM ) in reverse mode and TJ 200  
°C in bypass mode  
6) Thermal resistance from junction to lead/  
terminal at distance 0 mm from case  
Diode  
© by SEMIKRON  
Rev. 1 – 10.08.2011  
1

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