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SB3045FCT

更新时间： 2024-09-24 20:30:15
品牌 Logo 应用领域
WTE 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 44K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN

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SB3045FCT 数据手册

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®
SB3020FCT – SB30100FCT  
30A DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
ITO-220  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
—
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
2
3
4.16  
D
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.60  
2.29  
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.30  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
3020FCT 3030FCT 3040FCT 3045FCT 3050FCT 3060FCT 3080FCT 30100FCT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
30  
15  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
VFM  
200  
A
V
Forward Voltage per diode @IF = 15A, TJ = 25°C  
@IF = 15A, TJ = 125°C  
0.62  
0.57  
0.75  
0.65  
0.85  
0.75  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
1.0  
20  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
750  
500  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
52  
4.0  
°C/W  
RMS Isolation Voltage, t = 1 min  
VISO  
1500  
V
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
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