Datasheet > SB30150LCT

SB30150LCT

更新时间： 2024-10-29 12:56:39

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ASEMI		/
页数	文件大小	规格书
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描述
DUAL LOW VF SCHOTTKY RECTIFIER

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中文翻译

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SB30150LCT 数据手册

SB30150LCT

SB3 0150LCT

DUAL LOW VF SCHOTTKY RECTIFIER

30 Amperes

4.93

4.53

10.36

9.96

VOLTAGE

150 Volts

CURRENT

2.72

2.32

FEATURES

• Low forward voltage drop, low power losses

• High efficiency operation

• In compliance with EU RoHS 2002/95/EC directives

2.96

2.56

1.24

1.20

1.46

1.26

MECHANICAL DATA

0.9

0.7

Case : TO-220AB, Plastic

0.6

0.45

Terminals : Solderable per MIL-STD-750, Method 2026

Weight: 0.0655 ounces, 1.859 grams.

2.74

2.34

2.74

2.34

MAXIMUM RATINGS(TA=25^oC unless otherwise noted)

PARAMETER

SYMBOL

VALUE

150

UNIT

Maximum repetitive peak reverse voltage

RRM

per device

Maximum average forward rectified current (Fig.3)

per diode

F(AV)

FSM

Peak forward surge current 8.3ms single half sine-wave

per diode

200

2.5

superimposed on rated load per diode

Typical thermal resistance

Operating junction

RΘ

^oC/W

^oC

-55 to + 150

Storage temperature range

TSTG

^oC

ELECTRICAL CHARACTERISTICS(T^A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

=1.0mA

MIN.

103

TYP.

120

MAX.

UNIT

Breakdown voltage per diode

=5A

=10A

0.57

0.62

0.77

=25^oC

Instantaneous forward voltage per

diode ⁽¹⁾

=5A

=10A

0.54

0.64

=125^oC

0.72

=70V

μA

Reverse current per diode ⁽²⁾

=25^oC

500

μA

R=100V

=125^oC

Note.1 Pulse test : 380μs pulse width, 1% duty cycle

2. Pulse test : Pulse width < 2.5ms

PAGE . 1

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