5秒后页面跳转
SB250-T3 PDF预览

SB250-T3

更新时间: 2024-09-24 22:43:31
品牌 Logo 应用领域
WTE /
页数 文件大小 规格书
3页 51K
描述
2.0A SCHOTTKY BARRIER RECTIFIER

SB250-T3 数据手册

 浏览型号SB250-T3的Datasheet PDF文件第2页浏览型号SB250-T3的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
SB220 – SB260  
2.0A SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
!
!
High Current Capability  
A
B
A
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
C
D
Mechanical Data  
DO-15  
Min  
Dim  
A
Max  
!
!
Case: Molded Plastic  
25.4  
5.50  
0.71  
2.60  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
B
7.62  
0.864  
3.60  
C
!
!
!
!
D
Weight: 0.40 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
SB220  
20  
SB230  
30  
SB240  
SB250  
50  
SB260  
60  
Unit  
VRRM  
VRWM  
VR  
40  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
14  
21  
28  
35  
42  
V
A
Average Rectified Output Current (Note 1) @TL = 100°C  
2.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
50  
A
Forward Voltage  
@IF = 2.0A  
VFM  
IRM  
0.50  
170  
0.70  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
10  
mA  
Typical Junction Capacitance (Note 2)  
Cj  
140  
pF  
K/W  
K/W  
°C  
Typical Thermal Resistance Junction to Lead  
RJL  
15  
50  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SB220 – SB260  
1 of 3  
© 2002 Won-Top Electronics  

与SB250-T3相关器件

型号 品牌 获取价格 描述 数据表
SB250-T3-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15, ROHS COMPLI
SB250-TB WTE

获取价格

2.0A SCHOTTKY BARRIER RECTIFIER
SB250-TB-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15, ROHS COMPLI
SB250T-G COMCHIP

获取价格

Leaded Schottky Barrier Rectifiers
SB251 TSC

获取价格

High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
SB251 RFE

获取价格

Bridge Rectifier Diode, 25A, 100V V(RRM),
SB2510 SURGE

获取价格

25.0 AMP SILICON BRIDGE
SB2510 TSC

获取价格

High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
SB2510 RFE

获取价格

Bridge Rectifier Diode, 25A, 1000V V(RRM),
SB2510/W RFE

获取价格

Bridge Rectifier Diode, 25A, 1000V V(RRM),