WTE
PO WER SEMICONDUCTORS
SB220 – SB260
2.0A SCHOTTKY BARRIER RECTIFIER
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
!
!
High Current Capability
A
B
A
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
C
D
Mechanical Data
DO-15
Min
Dim
A
Max
!
!
Case: Molded Plastic
25.4
5.50
0.71
2.60
—
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
B
7.62
0.864
3.60
C
!
!
!
!
D
Weight: 0.40 grams (approx.)
Mounting Position: Any
All Dimensions in mm
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
SB220
20
SB230
30
SB240
SB250
50
SB260
60
Unit
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
VR(RMS)
IO
14
21
28
35
42
V
A
Average Rectified Output Current (Note 1) @TL = 100°C
2.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 2.0A
VFM
IRM
0.50
170
0.70
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
10
mA
Typical Junction Capacitance (Note 2)
Cj
140
pF
K/W
K/W
°C
Typical Thermal Resistance Junction to Lead
RꢀJL
15
50
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
RꢀJA
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB220 – SB260
1 of 3
© 2002 Won-Top Electronics