Datasheet > SB20H150CT-1E3

SB20H150CT-1E3

更新时间： 2024-11-24 12:14:47

品牌	Logo	应用领域
科盛美 - KERSEMI		高压
页数	文件大小	规格书
4页	1566K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

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中文翻译

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数据手册

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SB20H150CT-1E3 数据手册

MBR20H150CT, MBRF20H150CT & SB20H150CT-1

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High frequency operation

• Solder dip 260 °C, 40 s

MBR20H150CT

TO-262AA

MBRF20H150CT

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling and

polarity protection applications.

SB20H150CT-1

MECHANICAL DATA

PIN 1

PIN 3

PIN 2

CASE

Case: TO-220AB, ITO-220AB, TO-262AA

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

V_RRM

I_FSM

V_F

2 x 10 A

150 V

200 A

0.75 V

175 °C

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

T_J

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBR20H150CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

150

V_RWM

V_DC

total device

Maximum average forward rectified current

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

200

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 1.5 A, L = 10 mH

Voltage rate of change (rated V_R)

I_RRM

E_RSM

E_AS

1.0

V/µs

°C

11.25

dV/dt

T_J, T_STG

V_AC

10 000

- 65 to + 175

1500

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min

www.kersemi.com

12 3 4

中文翻译

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