WTE
PO WER SEMICONDUCTORS
SB2030PT – SB2060PT
20A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
H
!
!
!
!
!
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
TO-3P
Dim
A
B
C
D
E
Min
3.20
Max
3.50
S
4.59
5.16
J
K
20.80
19.70
2.10
21.30
20.20
2.40
R
PIN1
2
3
L
P
0.51
0.76
G
H
J
15.90
1.70
16.40
2.70
3.10 Ø
3.50
3.30 Ø
4.51
K
L
Mechanical Data
N
!
!
Case: Molded Plastic
5.20
5.70
M
N
P
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Weight: 5.6 grams (approx.)
Mounting Position: Any
M
1.12
1.22
2.90
3.30
A
11.70
12.80
R
S
!
!
!
!
B
4.30 Typical
All Dimensions in mm
Marking: Type Number
C
PIN 1 -
PIN 3 -
+
Case PIN 2
G
D
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
Characteristic
Symbol
Unit
2030PT 2035PT 2040PT 2045PT 2050PT 2060PT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
21
35
40
28
45
50
35
60
42
V
RMS Reverse Voltage
VR(RMS)
IO
24.5
31.5
V
A
Average Rectified Output Current
@TC = 100°C
20
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
250
A
Forward Voltage
@IF = 10A
VFM
IRM
0.55
0.75
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
1.0
50
mA
Typical Junction Capacitance (Note 1)
Cj
1100
2.5
pF
K/W
°C
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
RꢀJC
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB2030PT – SB2060PT
1 of 3
© 2002 Won-Top Electronics