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SB2040FCT PDF预览

SB2040FCT

更新时间: 2024-11-21 14:53:55
品牌 Logo 应用领域
WON-TOP 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 44K
描述
Powerpack

SB2040FCT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.27
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SB2040FCT 数据手册

 浏览型号SB2040FCT的Datasheet PDF文件第2页浏览型号SB2040FCT的Datasheet PDF文件第3页浏览型号SB2040FCT的Datasheet PDF文件第4页 
®
SB2020FCT – SB20100FCT  
20A DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
ITO-220  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
2
3
4.16  
D
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.60  
2.29  
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.30  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
2020FCT 2030FCT 2040FCT 2045FCT 2050FCT 2060FCT 2080FCT 20100FCT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
20  
10  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
VFM  
150  
A
V
Forward Voltage  
per diode  
@IF = 10A, TJ = 25°C  
@IF = 10A, TJ = 125°C  
0.55  
0.50  
0.75  
0.65  
0.85  
0.75  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.5  
20  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
650  
350  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
62  
4.0  
°C/W  
RMS Isolation Voltage, t = 1 min  
VISO  
1500  
V
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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