Datasheet > SB20150CT_08

SB20150CT_08

更新时间： 2024-09-23 06:10:07

品牌	Logo	应用领域
WTE		高压
页数	文件大小	规格书
4页	48K
描述
20A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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SB20150CT_08 数据手册

WTE

POWER SEMICONDUCTORS

SB20150CT – SB20200CT

20A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

Features

ꢀ

Schottky Barrier Chip

ꢀ

Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-220

Min

Dim

Max

15.90

10.70

3.43

13.90

9.80

2.54

PIN1

3.56

4.56

12.70

0.51

14.73

0.96

3.55 Ø

5.75

4.09 Ø

6.85

Mechanical Data

ꢀ

Case: TO-220, Molded Plastic

4.16

5.00

ꢀ

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

2.03

2.92

0.30

0.65

ꢀ

1.14

1.40

2.29

2.79

All Dimensions in mm

PIN 1 -

PIN 3 -

Case, PIN 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB20150CT

SB20200CT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

V^R

150

105

200

140

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 95°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM

200

0.92

Forward Voltage

@I_F= 10A

VFM

I^RM

Peak Reverse Current

@T_A= 25°C

0.5

100

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 1)

1100

°C

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB20150CT – SB20200CT

1 of 4

12 3 4

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