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SB20-05J PDF预览

SB20-05J

更新时间: 2024-09-17 22:22:23
品牌 Logo 应用领域
三洋 - SANYO 二极管局域网
页数 文件大小 规格书
3页 83K
描述
50V, 2A Rectifier

SB20-05J 技术参数

生命周期:Obsolete零件包装代码:TO-220ML
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:60 A
元件数量:2相数:1
端子数量:3最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向电流:100 µA
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

SB20-05J 数据手册

 浏览型号SB20-05J的Datasheet PDF文件第2页浏览型号SB20-05J的Datasheet PDF文件第3页 
Ordering number:EN2493  
SB20-05J  
Schottky Barrier Diode (Twin Type · Cathode Common)  
50V, 2A Rectifier  
Applications  
Package Dimensions  
unit:mm  
· High frequency rectification (switching regulators,  
converters, choppers).  
1178  
[SB20-05J]  
Features  
· Low forward voltage (V max=0.55V).  
F
· Fast reverse recovery time (trr max=30ns).  
· Low switching noise.  
· Low leakage current and high reliability due to  
highly reliable planar structure.  
· Micaless package facilitating easy mounting.  
A:Anode  
C:Cathode  
A:Anode  
SANYO:TO-220ML  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
50  
55  
2
V
V
RRM  
V
RSM  
I
A
50Hz, resistive load, Tc=116˚C  
50Hz sine wave, 1 cycle  
O
Surge Forward Current  
I
60  
A
FSM  
Junction Temperature  
Tj  
–55 to +125  
–55 to +125  
˚C  
˚C  
Storage Temperature  
Tstg  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Conditons  
Unit  
Symbol  
min  
50  
max  
Reverse Voltage  
V
V
V
I
=0.5mA, Tj=25˚C, *  
R
R
Forward Voltage  
V
0.55  
I =1A, Tj=25˚C, *  
F
F
Reverse Current  
I
V
=25V, Tj=25˚C, *  
0.1  
30  
mA  
ns  
R
R
Reverse Recovery Time  
Thermal Resistance  
trr  
I =2A, Tj=25˚C, *,–dI /dt=10A/µs  
F
F
Rthj-c  
Junction-Case:Smoothed DC  
5.5  
˚C/W  
Note *:Value per element  
Electrical Connection  
A:Anode  
C:Cathode  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
43098HA (KT)/N037AT, TS No.2493-1/3  

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