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SB20-03B PDF预览

SB20-03B

更新时间: 2024-09-17 22:22:23
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
3页 80K
描述
30V, 2A Rectifier

SB20-03B 技术参数

生命周期:Transferred包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
其他特性:HIGH RELIABILITY, LOW LEAKAGE CURRENT应用:HIGH VOLTAGE FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:20 A
元件数量:1相数:1
端子数量:3最高工作温度:125 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向电流:100 µA最大反向恢复时间:0.02 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE

SB20-03B 数据手册

 浏览型号SB20-03B的Datasheet PDF文件第2页浏览型号SB20-03B的Datasheet PDF文件第3页 
Ordering number:EN3001  
SB20-03B  
Schottky Barrier Diode  
30V, 2A Rectifier  
Applications  
Package Dimensions  
unit:mm  
· High frequency rectification (switching regulators,  
converters, choppers).  
1212  
[SB20-03B]  
Features  
· Low forward voltage (V max=0.55V).  
F
· Fast reverse recovery time (trr max=20ns).  
· Low switching noise.  
· Low leakage current and high reliability due to  
highly reliable planar structure.  
C:Cathode  
A:Anode  
JEDEC:TO-126  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
30  
35  
2
V
V
RRM  
V
RSM  
I
50Hz, resistive load. Ta=113˚C  
50Hz sine wave, 1 cycle  
A
O
Surge Forward Current  
I
20  
A
FSM  
Junction Temperature  
Tj  
–55 to +125  
–55 to +125  
˚C  
˚C  
Storage Temperature  
Tstg  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditons  
Unit  
min  
30  
max  
Reverse Voltage  
Forward Voltage  
Reverse Current  
V
I
=500µA  
R
V
V
R
V
I =2A  
0.55  
F
F
I
V
V
=15V  
100  
µA  
pF  
R
C
R
R
Interterminal Capacitance  
Reverse Recovery Time  
Thermal Resistance  
=10V, f=1MHz  
70  
trr  
I =I =100mA, See sepcified Test Circuit  
20  
ns  
F
R
Rthj-c  
Junction-Case:Smoothed DC  
7
˚C/W  
trr Test Circuit  
Unit (resistance:)  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
43098HA (KT)/3019TA, TS No.3001-1/3  

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