JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
DO-41 Plastic-Encapsulate Diodes
Schottky Rectifier Diodes
SB120 THRU SB1100
Features
● IF(AV)
1A
DO-41
● VRRM
20V-100V
● High surge current cap ability
Polarity: Color band denotes cathode
●
Applications
● Rectifier
Marking
●
SB1X
:
X
From 20 To 100
SB1
20 30 40 50 60 80 100
Item
Symbol
Unit
Conditions
Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
V
V
V
20
14
30
21
40
28
50
35
60
42
80 100
56 70
MaximumRMS Voltage
Maximum DC Blocking Voltage
20
30
40
50
60
80 100
60HZ Half-sine wave,
Resistance load,(see fig.1)
IF(AV)
A
A
Average Forward Current
1.0
30
60Hz Half-sine wave ,
1 cycle , Ta =25℃
Surge(Non-repetitive)Forward
Current
IFSM
TJ
℃
℃
-55 ~ +125
-55 ~ +150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T=25℃ Unless otherwise specified)
SB1
Item
Symbol Unit
Test Condition
20
30 40 50 60 80 100
0.85
Maximum Peak Forward Voltage
VFM
IFM=1.0A
0.7
0.55
V
IRRM1
T =25℃
0.1
J
Maximum Peak Reverse Current
Typical junction capacitance
VRM=VRRM
mA
IRRM2
T =125℃
J
10
Measured at 1MHz and applied
reverse voltage of 4.0V D.C.
CJ
110
80
pF
Rθ
50
Between junction and ambient
J-A
Typical Thermal Resistance
℃/W
Rθ
10
Between junction and lead
J-L
Notes:
1)
Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
Rev. - 1.0
1
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