Datasheet > SB1680FCT

SB1680FCT

更新时间： 2023-12-06 19:52:44

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SB1680FCT 数据手册

SB1620FCT – SB16100FCT

16A DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Schottky Barrier Chip



Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

ITO-220

Dim

Min

14.60

9.70

2.55

—

Max

15.40

10.30

2.85

PIN1

4.16

13.00

0.50

3.00 Ø

6.30

4.20

2.50

0.50

2.60

2.29

13.80

0.75

3.50 Ø

6.90

Mechanical Data



Case: ITO-220, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.9 grams (approx.)

4.80

2.90

0.75



3.30

2.79

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 0.6 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

PIN 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

1620FCT 1630FCT 1640FCT 1645FCT 1650FCT 1660FCT 1680FCT 16100FCT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

VFM

150

Forward Voltage

per diode

@I_F= 8.0A, T_J= 25°C

@I_F= 8.0A, T_J= 125°C

0.55

0.50

0.75

0.65

0.85

0.75

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

0.5

IRM

Typical Junction Capacitance (Note 1)

500

350

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

4.0

°C/W

RMS Isolation Voltage, t = 1 min

VISO

1500

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

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