SB1650

更新时间： 2024-01-01 17:05:09

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	50K
描述
16A SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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SB1650 数据手册

WTE

PO WER SEMICONDUCTORS

SB1630 – SB1660

16A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

High Current Capability, Low Forward

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-220A

Dim

Min

14.9

—

Max

15.1

10.5

2.87

4.06

14.22

0.94

3.91 Ø

6.86

4.70

2.79

0.64

1.40

5.20

2.62

3.56

13.46

0.68

3.74 Ø

5.84

4.44

2.54

0.35

1.14

4.95

PIN1

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

PIN 1 +

PIN 2 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol SB1630 SB1635 SB1640 SB1645 SB1650 SB1660 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

24.5

31.5

Average Rectified Output Current

@T_C= 95°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

275

Forward Voltage

@I_F= 16A

V^FM

I^RM

0.57

0.75

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

Typical Junction Capacitance (Note 1)

C^j

700

3.5

K/W

°C

Typical Thermal Resistance Junction to Case (Note 2)

Operating and Storage Temperature Range

R^ꢀ^JC

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB1630 – SB1660

1 of 3

12 3

中文翻译

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