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SB1620FCT-LF PDF预览

SB1620FCT-LF

更新时间: 2024-11-25 13:13:15
品牌 Logo 应用领域
WTE 整流二极管瞄准线功效局域网
页数 文件大小 规格书
3页 41K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 20V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220, 3 PIN

SB1620FCT-LF 数据手册

 浏览型号SB1620FCT-LF的Datasheet PDF文件第2页浏览型号SB1620FCT-LF的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
SB1620CT – SB16100CT  
16A SCHOTTKY BARRIER RECTIFIER  
Features  
!
Schottky Barrier Chip  
B
!
!
!
!
!
Guard Ring for Transient Protection  
High Current Capability, Low Forward  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
TO-220  
C
Dim  
A
B
C
D
E
Min  
14.9  
Max  
15.1  
10.5  
2.87  
4.06  
14.22  
0.94  
3.91 Ø  
6.86  
4.70  
2.79  
0.64  
1.40  
2.67  
G
F
A
2.62  
3.56  
13.46  
0.68  
3.74 Ø  
5.84  
4.44  
2.54  
0.35  
1.14  
2.41  
PIN1  
2
3
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D  
F
G
H
I
Mechanical Data  
!
!
E
Case: TO-220 Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: As Marked on Body  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
P
J
K
L
!
!
!
!
I
L
J
P
H
All Dimensions in mm  
Marking: Type Number  
PIN 1 -  
PIN 3 -  
+
Case PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
1620CT 1630CT 1640CT 1650CT 1660CT 1680CT 16100CT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
16  
V
A
Average Rectified Output Current  
@TC = 95°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
0.55  
0.75  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
100  
mA  
Typical Junction Capacitance (Note 1)  
Cj  
700  
pF  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SB1620CT – SB16100CT  
1 of 3  
© 2002 Won-Top Electronics  

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 30V V(RRM), Silicon, TO-220AB, ROHS COM