SB160EA-G

更新时间： 2024-11-25 13:13:11

品牌	Logo	应用领域
上华 - COMCHIP		整流二极管
页数	文件大小	规格书
3页	57K
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SB160EA-G 数据手册

Leaded Schottky Barrier Rectifiers

Comchip

S M D D i o d e S p e c i a l i s t

SB120-G Thru. SB1100-G

Voltage: 20 to 100 V

Current: 1.0 A

RoHS Device

DO-41

Features

-Low drop down voltage.

-Metal-Semiconductor junction with guard ring

-High surge current capability

1.0(25.4) Min.

.107(2.7)

.080(2.0)

-Silicon epitaxial planar chips.

-For use in low voltage, high efficiency inverters,

free wheeling, and polarity protection applications

.205(5.2)

.160(4.1)

-Lead-free part, meet RoHS requirements.

Mechanical data

1.0(25.4) Min.

-Epoxy: UL94-V0 rated flame retardant

-Case: Molded plastic body DO-41

-Terminals: Solderable per MIL-STD-750 Method 2026

-Polarity: Color band denotes cathode end

-Mounting Position: Any

.034(0.86)

.028(0.70)

Dimensions in inches and (millimeter)

-Weight: 0.34grams

Electrical Characteristics (at TA=25°C unless otherwise noted)

Ratings at Ta=25°C unless otherwise noted.

Symbol

Parameter

Unit

140-G

120-G

145-G

150-G

160-G

180-G 1100-G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=75°C, See Figure 1

I(AV)

1.0

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

(JEDEC method) TL=110°C

IFSM

Maximum forward voltage at 1.0A

0.50

0.70

0.85

0.5

Maximum DC reverse current

At rated DC blocking voltage

=25°C

=100°C

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

110

RθJA

RθJL

50.0

30.0

°C/W

Operating junction temperature range

Storage temperature range

-55 to +125

-55 to +150

°C

TSTG

-55 to +150

NOTES:

1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.

2. Thermal resistance junction to ambient and junction to lead.

REV:A

Page 1

QW-BB040

Comchip Technology CO., LTD.

12 3

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