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SB160A-E3/73 PDF预览

SB160A-E3/73

更新时间: 2024-10-01 14:38:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 91K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM),

SB160A-E3/73 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JESD-609代码:e3最大非重复峰值正向电流:35 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
Base Number Matches:1

SB160A-E3/73 数据手册

 浏览型号SB160A-E3/73的Datasheet PDF文件第2页浏览型号SB160A-E3/73的Datasheet PDF文件第3页浏览型号SB160A-E3/73的Datasheet PDF文件第4页 
New Product  
SB120A thru SB160A  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
• Low forward voltage drop  
• High frequency operation  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
DO-204AL (DO-41)  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
Epoxy meets UL 94V-0 flammability rating  
VRRM  
IFSM  
20 V to 60 V  
35 A  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL SB120A SB130A SB140A SB150A SB160A  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified current at  
0.375" (9.5 mm) lead length (Fig. 1)  
IF(AV)  
1.0  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
35  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS SYMBOL SB120A SB130A SB140A SB150A SB160A  
UNIT  
Maximum instantaneous forward  
voltage (1)  
1.0 A  
VF  
IR  
0.5  
10  
0.7  
V
0.5  
Maximum reverse current  
TA = 25 °C  
TA = 100 °C  
(2)  
mA  
at rated VR  
5.0  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
Document Number: 88862  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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