GALAXY ELECTRICAL
SB1150---SB1200
BL
Reverse Voltage: 150V,200 V
Forward Current: 1.0 A
SCHOTTKY BARRIER RECTIFIER
FEATURES
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Metal-Semiconductor junction with guard ring
DO-41
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Epitaxial construction
.
.
Low forward voltage drop, low swithing losses
High surge capacity
.
For use in low voltage, high frequency inverters free
wheeling, and polarity protection applications
MECHANICAL DATA
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.
Case: JEDEC DO-41, molded plastic body
Terminals: Axial lead ,solderable per MIL-STD-
750, Method 2026
Polarity: As marked
Mounting Position: Any
.
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Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Symbol
UNITS
SB1150
SB1200
VRRM
VRWS
VDC
Maximum recurrent peak reverse voltage
Maximum RMS voltage
150
105
150
200
140
200
V
V
V
Maximum DC blocking voltage
Maximum average forward tolal device
rectified current @TL=110°C
I(AV)
A
A
1.0
40
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
IFSM
Maximum instantaneous
forward voltage @1.0A
V
VF
IR
0.95
Maximum reverse current @TA=25°C
at rated DC blocking voltage @TA=100°C
0.1
mA
10
RθJA
TJ
Maximum thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
°C/W
50
-55 --- +150
°C
°C
TSTG
-55 --- +150
www.galaxycn.com
NOTES: 1. Thermal resistance from junction to ambient.
Document Number 2066008
1.
BLGALAXY ELECTRICAL