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SB120-LF PDF预览

SB120-LF

更新时间: 2024-01-18 05:09:34
品牌 Logo 应用领域
WTE 整流二极管瞄准线
页数 文件大小 规格书
3页 52K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

SB120-LF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DO-41, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
其他特性:FREE WHEELING DIODE, LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:AEC-Q101最大重复峰值反向电压:20 V
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SB120-LF 数据手册

 浏览型号SB120-LF的Datasheet PDF文件第2页浏览型号SB120-LF的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
SB120 – SB160  
1.0A SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
!
!
High Current Capability  
A
B
A
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
C
D
Mechanical Data  
DO-41  
Min  
Dim  
A
Max  
!
!
Case: Molded Plastic  
25.4  
4.06  
0.71  
2.00  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
B
5.21  
0.864  
2.72  
C
!
!
!
!
D
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
SB120  
20  
SB130  
30  
SB140  
SB150  
50  
SB160  
60  
Unit  
VRRM  
VRWM  
VR  
40  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
14  
21  
28  
35  
42  
V
A
Average Rectified Output Current (Note 1) @TL = 100°C  
1.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
40  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
0.50  
110  
0.70  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
10  
mA  
Typical Junction Capacitance (Note 2)  
Cj  
80  
pF  
K/W  
K/W  
°C  
Typical Thermal Resistance Junction to Lead  
RJL  
15  
50  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SB120 - SB160  
1 of 3  
© 2002 Won-Top Electronics  

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