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SB120-E3 PDF预览

SB120-E3

更新时间: 2024-11-15 14:35:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 302K
描述
DIODE 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode

SB120-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
Is Samacsys:N其他特性:FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.48 VJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

SB120-E3 数据手册

 浏览型号SB120-E3的Datasheet PDF文件第2页浏览型号SB120-E3的Datasheet PDF文件第3页 
SB120 thru SB160  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
1.0 A  
20 V to 60 V  
50 A  
VF  
0.48 V, 0.65 V  
125 °C, 150 °C  
Tj max.  
DO-204AL (DO-41)  
Features  
Typical Applications  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
For use in low voltage high frequency inverters, free  
wheeling, dc-to-dc converters, and polarity protection  
applications  
• Low forward voltage drop  
Mechanical Data  
Case: DO-204AL (DO-41)  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• High forward surge capability  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
E3 suffix for commercial grade  
Polarity: Color band denotes the cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
SB120  
20  
SB130  
30  
SB140  
40  
SB150  
50  
SB160  
60  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
14  
20  
21  
30  
28  
40  
35  
50  
42  
60  
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at  
0.375" (9.5 mm) lead length (See Fig. 1)  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
50  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
Document Number 88715  
14-Jul-05  
www.vishay.com  
1

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