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SB1080DC PDF预览

SB1080DC

更新时间： 2023-12-06 20:03:53
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 44K
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SMD

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SB1080DC 数据手册

 浏览型号SB1080DC的Datasheet PDF文件第2页浏览型号SB1080DC的Datasheet PDF文件第3页浏览型号SB1080DC的Datasheet PDF文件第4页 
®
SB1020DC – SB10100DC  
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Low Forward Voltage  
C
Epitaxial Construction with Oxide Passivation  
Guard Ring for Transient and ESD Protection  
Surge Overload Rating to 150A Peak  
Low Power Loss, High Efficiency  
Fast Switching  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Switching  
Power Supplies  
A
J
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Mechanical Data  
Dim  
A
Min  
9.80  
9.60  
4.40  
8.50  
—
Max  
10.40  
10.60  
4.80  
9.10  
2.80  
1.40  
0.99  
1.40  
0.70  
2.75  
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
B
C
D
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
E
Case, PIN 2  
G
H
1.00  
—
J
1.20  
0.30  
2.35  
K
P
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
1020DC 1030DC 1040DC 1045DC 1050DC 1060DC 1080DC 10100DC  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
10  
5.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage per diode  
@IF = 5.0A  
VFM  
IRM  
CJ  
0.55  
450  
0.75  
0.85  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
20  
Typical Junction Capacitance (Note 1)  
350  
Thermal Resistance Junction to Ambient (Note 2)  
Thermal Resistance Junction to Case (Note 2)  
RθJA  
RθJC  
60  
2.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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