SB106P200-W-AG

更新时间： 2024-11-26 04:05:51

品牌	Logo	应用领域
TRSYS		整流二极管
页数	文件大小	规格书
1页	155K
描述
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp

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SB106P200-W-AG 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

SB106P200-W-AG 数据手册

SB106P200-W-Ag/Al

Schottky Barrier Diode Wafer

106 Mils, 200 Volt, 10 Amp

Data Sheet

1. Solderable Surface Ti/Ni/Ag - Suffix "Ag"

2. Wire Bond Surface Aluminium - Suffix "Al"

Features

Oxide Passivated Junction

Low Forward Voltage

150 º C Junction Operating

Low Reverse Leakage

Supplied as Wafers

Anode

Cathode

Solderable

Platinum Barrier

Surface Ti/Ni/Ag

Cathode

Symbol

Electrical Characteristics @ 25 C

SB106P200-W-Ag/Al ^{(See ordering code below)}

Symbol Unit

V_RRM

V_F

I_F(AV)

Volt

Maximum Repetitive Reverse Voltage (2)

Maximum Forward Voltage (1)(2)

200

0.85

Volt

Amp

µA

Typical Average Forward Rectified Current (2)

Reverse Leakage Current (2)

I_R

Reverse Leakage Current @ 125 C (2)

Junction Operating Temperature Range (2)

T_J

-65 to +150

T_SG

Storage Temperature Range (2)

(1) Pulse Width tp = < 300µS, Duty Cycle <2%

(2) The characteristics above assume the die are assembled in

indusry standard packages using appropriate attach methods.

Ordering Code

SB040P150-W-Ag

Schottky Barrier 40 Mils Pt Barrier 150 Volt Wafer Ti/Ni/Ag

Mechanical Dimensions

Die

Wafer

Wafer Diameter - 100 mm (4")

Wafer Thickness 420 +/- 20

Top (Anode) - Ti/Ni/Ag (Suffix "Ag")

or Aluminium (Suffix "Al")

97.6

106.0

(2.70)

(2.48)

Bottom (cathode) Ti/Ni/Ag

106.0

(2.70)

97.6

(2.48)

420 +/- 20 µm

Dimensions in mils (mm)

Third Angle Protection

The information in this datasheet does not form part of any contract, quotation

SCD0908-1

Transys Electronics LTD

guarantee,warranty or representation, it has been produced in good faith and is believed to

be accurate and may be changed without notice at anytime. Liability will not be accepted by

Transys Electronics LTD for any consequences whatsoever in its use. This publication does

not convey nor imply any license under patent or other intellectual/industrial property rights.

The products within this specification are not designed for use in any life support

apparatus whatsoever where malfunction can be reasonably expected to cause personal

injury or death. Customers using these products in the aforementioned applications do so at

their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal

fees either direct, incidental or consequential from this improper use or sale.

Birmingham UK.

Email: sales@transyselectronics.com

Website: www.transyselectronics.com

Tel: + 44 (0) 121 776 6321

Fax: + 44 (0) 121 776 6997

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与SB106P200-W-AG相关器件

型号	品牌	获取价格	描述	数据表
SB106P200-W-AG/AL	TRSYS	获取价格	Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
SB107	TSC	获取价格	Single Phase 10 AMPS. Silicon Bridge Rectifiers
SB107	EDAL	获取价格	Silicon Schottky Barrier Rectifiers
SB107G	TSC	获取价格	Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers
SB1080	WTE	获取价格	10A SCHOTTKY BARRIER RECTIFIER
SB1080	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)
SB1080	TRSYS	获取价格	10 AMPERE SCHOTTKY BARRIER RECTIFIERS
SB1080	PACELEADER	获取价格	SCHOTTKY BARRIER RECTIFIER
SB1080	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 35 to 100V Forward Current 10A
SB1080	WON-TOP	获取价格	Powerpack

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