SB1060FCT

更新时间： 2024-11-25 22:43:31

品牌	Logo	应用领域
WTE		二极管瞄准线分离技术隔离技术功效局域网
页数	文件大小	规格书
3页	42K
描述
10A ISOLATION SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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SB1060FCT 数据手册

WTE

POWER SEMICONDUCTORS

SB1020FCT – SB10100FCT

10A ISOLATION SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

High Current Capability, Low Forward

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

ITO-220

Dim

Min

14.9

—

Max

15.1

10.5

2.87

4.06

14.22

0.94

3.91 Ø

6.86

4.70

2.79

0.64

1.40

2.67

2.62

3.56

13.46

0.68

3.74 Ø

5.84

4.44

2.54

0.35

1.14

2.41

PIN1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

Case: ITO-220 Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: As Marked on Body

Weight: 2.24 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

PIN 1 -

PIN 3 -

PIN 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

1020FCT 1030FCT 1040FCT 1050FCT 1060FCT 1080FCT 10100FCT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 95°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 5.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

C^j

700

°C

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB1020FCT – SB10100FCT

1 of 3

12 3

中文翻译

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