WTE
POWER SEMICONDUCTORS
SB1020F – SB10100F
10A ISOLATION SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
ITO-220A
C
Dim
A
B
C
D
E
Min
14.9
—
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91 Ø
6.86
4.70
2.79
0.64
1.40
5.20
G
F
A
2.62
3.56
13.46
0.68
3.74 Ø
5.84
4.44
2.54
0.35
1.14
4.95
PIN1
2
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
F
G
H
I
Mechanical Data
!
!
E
Case: ITO-220A Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
P
J
K
L
!
!
!
!
I
L
J
P
H
All Dimensions in mm
Marking: Type Number
PIN 1 +
PIN 2 -
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
Characteristic
Symbol
Unit
1020F 1030F 1040F 1050F 1060F 1080F 10100F
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
50
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
35
10
V
A
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
150
A
Forward Voltage
@IF = 10A
VFM
IRM
0.55
0.75
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
50
mA
Typical Junction Capacitance (Note 1)
Cj
700
3.5
pF
K/W
°C
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
RꢀJC
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB1020F – SB10100F
1 of 3
© 2002 Won-Top Electronics