5秒后页面跳转
SB1045FCT PDF预览

SB1045FCT

更新时间: 2023-12-06 20:01:04
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
描述
Powerpack

SB1045FCT 数据手册

 浏览型号SB1045FCT的Datasheet PDF文件第2页浏览型号SB1045FCT的Datasheet PDF文件第3页浏览型号SB1045FCT的Datasheet PDF文件第4页 
®
SB1020FCT – SB10100FCT  
10A DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
ITO-220  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
2
3
4.16  
D
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.60  
2.29  
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.30  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Characteristic  
Symbol  
Unit  
1020FCT 1030FCT 1040FCT 1045FCT 1050FCT 1060FCT 1080FCT 10100FCT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
10  
5.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage per diode  
@IF = 5.0A  
VFM  
IRM  
CJ  
0.55  
450  
0.75  
0.85  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
20  
Typical Junction Capacitance (Note 1)  
350  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
62  
4.0  
°C/W  
RMS Isolation Voltage, t = 1 min  
VISO  
1500  
V
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

与SB1045FCT相关器件

型号 品牌 获取价格 描述 数据表
SB1045FCT-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, TO-220AB, ROHS COM
SB1045F-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC, ROHS CO
SB1045L FORMOSA

获取价格

10.0A SUPER BARRIER RECTIFIER
SB1045L SUNMATE

获取价格

Rectifier device Schottky Diode
SB1045L HC

获取价格

TO-277
SB1045LCT ASEMI

获取价格

DUAL LOW VF SCHOTTKY RECTIFIER
SB1045LFCT ASEMI

获取价格

DUAL LOW VF SCHOTTKY RECTIFIER
SB1045TL SEMIKRON

获取价格

Schottky barrier rectifiers diodes
SB104G TSC

获取价格

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers
SB105 TSC

获取价格

Single Phase 10 AMPS. Silicon Bridge Rectifiers