Datasheet > SB10150F

SB10150F

更新时间： 2023-12-06 20:08:51

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SB10150F 数据手册

SB10150F – SB10200F

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Schottky Barrier Chip



Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

ITO-220A

Dim

Min

14.60

9.70

2.55

—

Max

15.40

10.30

2.85

PIN1

4.16

13.00

0.30

3.00 Ø

6.30

4.20

2.50

0.36

2.60

4.83

13.80

0.90

3.50 Ø

6.90

Mechanical Data



Case: ITO-220A, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.9 grams (approx.)

4.80

2.90

0.80



3.30

5.33

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 0.6 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB10150F

SB10200F

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

150

105

200

140

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

150

0.92

Forward Voltage

@I_F= 10A

VFM

IRM

Peak Reverse Current

@T_J= 25°C

0.2

At Rated DC Blocking Voltage

@T_J= 100°C

Typical Junction Capacitance (Note 1)

200

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

RθJA

RθJC

4.0

°C/W

RMS Isolation Voltage Terminals to Case, t = 1 min

Operating and Storage Temperature Range

VISO

1500

TJ, TSTG

-55 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

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