THYRISTOR MODULE
(
)
PD,PE
PK 200HB
UL;E76102（M）
Power Thyristor/Diode Module PK200HB series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 1,600V are available.
92
26
12
26
7
4-φ6（M5）�
Isolated mounting base
●
T（AV）
T（RMS） TSM
200A, I 310A, I
I
5500A
● di/dt 200 A/μs
● dv/dt 500V/μs
18
2
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
R8.0
Internal Configurations
M8×14
♯110TAB
（2.8.0.5T）�
K2
G2
K2
K2
G2
3
2
1
3
2
1
3
2
1
K1G1
（A2）�
（K2）�
K1G1
A1K2
K1
（K2）�
（A2）�
（K2）�
（A2）�
Static switches
A1K2
A1K2
80±0.3
PK
PD
PE
Unit：A
■Maximum Ratings
Ratings
Symbol
Item
Unit
PK200HB120 PD200HB120
PE200HB120
PK200HB160 PD200HB160
PE200HB160
VRRM
VRSM
VDRM
1200
1300
1200
1600
1700
1600
V
V
V
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
＊
Symbol
Item
Conditions
Ratings
Unit
A
T（AV）
I
200
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：74℃
T（RMS）
I
310
A
Single phase, half wave, 180°conduction, Tc：74℃
1
TSM
I
A
／cycle, 50Hz/60Hz, peak Value, non-reqetitive
5000/5500
2
2
2
2
I t
Value for one cycle of surge current
125000
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
G（AV）
P
3
FGM
I
3
10
A
FGM
V
V
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Critical Rate of Rise of On-State Current
RGM
V
5
V
1
G
D
DRM
G
200
di/dt
I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI
/
dt＝0.1A/μs
A/μs
V
ISO
V
A.C. 1 minute
2500
＊Isolation Breakdown Voltage（R.M.S.）
Tj
＊
Operating Junction Temperature
－40 to ＋125
－40 to ＋125
2.7（28）
11（115）
510
℃
℃
Tstg
＊Storage Temperature
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Terminal（M8） Recommended Value 8.8-10 （90-105）
Typical Value
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
Item
Conditions
at V , Single phase, half wave, Tj＝125℃
Ratings
50
Unit
mA
mA
V
DRM
I
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
RRM
I
DRM
50
＊
＊
at V , Single phase, half wave, Tj＝125℃
TM
V
1.50
100/3
0.25
10
On-State Current 750A, Tj＝125℃ Inst. measurement
GT
GT
/V
T
D
I
Tj＝25℃，I ＝1A，V ＝6V
mA/V
V
1
GD
V
D
DRM
Tj＝125℃，V ＝
／
2V
1
tgt
T
G
D
DRM
G
I ＝250A，I ＝100mA，Tj＝25℃，V ＝／V ，dI /dt＝0.1A/μs
μs
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv/dt
Tj＝125℃，V ＝／V ，Exponential wave.
V/μs
mA
mA
℃/W
3
H
I
Tj＝25℃
L
I
Lutching Current, typ.
100
0.18
Tj＝25℃
Junction to case
Rth（j-c）＊Thermal Impedance, max.
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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