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SAF27N06-030L PDF预览

SAF27N06-030L

更新时间: 2024-01-18 11:27:23
品牌 Logo 应用领域
SENSITRON 局域网
页数 文件大小 规格书
3页 45K
描述
Power Field-Effect Transistor, TO-257, HERMETIC SEALED, METAL, MODIFIED TO-257CG, 3 PIN

SAF27N06-030L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-257
包装说明:FLANGE MOUNT, R-MSFM-P3针数:3
Reach Compliance Code:compliant风险等级:5.84
JEDEC-95代码:TO-257JESD-30 代码:R-MSFM-P3
端子数量:3最高工作温度:150 °C
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SAF27N06-030L 数据手册

 浏览型号SAF27N06-030L的Datasheet PDF文件第2页浏览型号SAF27N06-030L的Datasheet PDF文件第3页 
SAF27N06-030L  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4277, REV. C  
RAD TOLERANT LOW RDS HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
60 Volt, 0.03 Ohm, 40A MOSFET (current limited to 27A by package)  
Characterized at VGS of 4.5V for Logic Level Drive  
Total Dose Characterized to 300 Krad  
Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET  
Ceramic Seals with Glidcop leads  
Isolated Hermetic Metal Package  
Also available with glass seals and copper core alloy 52 leads  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
VGS  
MIN.  
-
-
-
-55  
-
TYP.  
MAX.  
±20  
27  
UNITS  
Volts  
Amps  
Amps  
°C  
Watts  
°C/W  
GATE TO SOURCE VOLTAGE  
ON-STATE DRAIN CURRENT  
PULSED DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
TOTAL DEVICE DISSIPATION  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
-
-
-
-
-
ID25  
IDM  
TJ/TSTG  
PD  
RθJC  
70  
+150  
165  
0.75  
-
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
60  
-
-
Volts  
VGS = 0V, ID = 250µA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
RDS(ON)  
VGS = 10V, ID = 20A  
-
-
1
-
0.025  
0.028  
-
0.030  
0.033  
VGS = 4.5V, ID = 20A  
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA  
FORWARD TRANSCONDUCTANCE  
VGS(th)  
gfs  
3
-
Volts  
70  
S(1/)  
VDS = 15V, ID = 20A  
ZERO GATE VOLTAGE DRAIN CURRENT  
IDSS  
IGSS  
-
-
-
1
50  
V
DS = Max. rating, VGS = 0V, TJ = 25°C  
µA  
TJ = 125°C  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
VGS = 20V  
GS = -20V  
-
-
100  
-100  
13  
nA  
V
VDD = 50V  
ID = 20A  
td(ON)  
tr  
8
40  
RISE TIME  
60  
nsec  
TURN OFF DELAY TIME  
VGS= 10V  
td(OFF)  
tf  
VSD  
15  
80  
1.0  
25  
120  
1.5  
FALL TIME  
DIODE FORWARD VOLTAGE  
Pulse test, t 300 µs, duty cycle d 2 %  
REVERSE RECOVERY TIME  
RG = 2.5Ω  
IF = 20A, VGS = 0V  
-
-
Volts  
nsec  
TJ = 25°C,  
IF= 20A, VR = 50V  
di/dt = 100A/µsec  
trr  
75  
120  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798•  
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com •  

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