SAF27N06-030L
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4277, REV. C
RAD TOLERANT LOW RDS HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
•
•
•
•
•
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60 Volt, 0.03 Ohm, 40A MOSFET (current limited to 27A by package)
Characterized at VGS of 4.5V for Logic Level Drive
Total Dose Characterized to 300 Krad
Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET
Ceramic Seals with Glidcop leads
Isolated Hermetic Metal Package
Also available with glass seals and copper core alloy 52 leads
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
VGS
MIN.
-
-
-
-55
-
TYP.
MAX.
±20
27
UNITS
Volts
Amps
Amps
°C
Watts
°C/W
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
-
-
-
-
-
-
ID25
IDM
TJ/TSTG
PD
RθJC
70
+150
165
0.75
-
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
60
-
-
Volts
VGS = 0V, ID = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
RDS(ON)
Ω
VGS = 10V, ID = 20A
-
-
1
-
0.025
0.028
-
0.030
0.033
VGS = 4.5V, ID = 20A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA
FORWARD TRANSCONDUCTANCE
VGS(th)
gfs
3
-
Volts
70
S(1/Ω)
VDS = 15V, ID = 20A
ZERO GATE VOLTAGE DRAIN CURRENT
IDSS
IGSS
-
-
-
1
50
V
DS = Max. rating, VGS = 0V, TJ = 25°C
µA
TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
TURN ON DELAY TIME
VGS = 20V
GS = -20V
-
-
100
-100
13
nA
V
VDD = 50V
ID = 20A
td(ON)
tr
8
40
RISE TIME
60
nsec
TURN OFF DELAY TIME
VGS= 10V
td(OFF)
tf
VSD
15
80
1.0
25
120
1.5
FALL TIME
DIODE FORWARD VOLTAGE
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
RG = 2.5Ω
IF = 20A, VGS = 0V
-
-
Volts
nsec
TJ = 25°C,
IF= 20A, VR = 50V
di/dt = 100A/µsec
trr
75
120
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