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SA6.0C/51 PDF预览

SA6.0C/51

更新时间： 2024-11-03 14:21:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 69K
描述
Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional

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SA6.0C/51 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.89
Is Samacsys：N击穿电压标称值：7.41 V
最大钳位电压：11.4 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：e0极性：BIDIRECTIONAL
最大重复峰值反向电压：6 V子类别：Transient Suppressors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

SA6.0C/51 数据手册

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SA5.0 thru SA170CA  
Vishay Semiconductors  
formerly General Semiconductor  
TRANSZORB® Transient Voltage  
Suppressors  
Stand Off Voltage 5.0 to 170V  
Peak Pulse Power 500W  
D0-204AC (DO-15)  
Features  
• Plastic package has Underwriters Laboratory  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
Flammability Classification 94V-0  
• Glass passivated junction  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
1.0 (25.4)  
min.  
• 500W peak pulse power surge capability  
with a 10/100µs waveform, repetition rate  
(duty cycle): 0.01%  
• High temperature soldering guaranteed:  
265°C/10 seconds, 0.375" (9.5mm) lead length, 5lbs.  
(2.3kg) tension  
0.300 (7.6)  
0.230 (5.8)  
Mechanical Data  
Case: JEDEC DO-204AC molded plastic body over  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
passivated junction  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
1.0 (25.4)  
min.  
Polarity: For unidirectional types the color band denotes  
the cathode, which is positive with respect to the anode  
under normal TVS operation  
Mounting Position: Any  
Weight: 0.015 oz., 0.4 g  
Packaging Codes – Options (Antistatic):  
51 – 1K per Bulk box, 10K/carton  
Dimensions in inches and (millimeters)  
54 – 4K per 13" paper Reel  
(52mm horiz. tape), 12K/carton  
73 – 2K per horiz. tape & Ammo box, 20K/carton  
Devices for Bidirectional Applications  
For bidirectional use C or CA suffix. (e.g. SA5.0C, SA170CA). Electrical characteristics apply in both directions.  
Maximum Ratings and Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
500 (min.)  
See Next Table  
3.0  
Unit  
Peak pulse power dissipation with a 10/1000µs  
PPPM  
W
waveform(1) (Fig. 1)  
Peak pulse current with a 10/1000µs waveform (Note 1)  
IPPM  
A
Steady state power dissipation at TA = 75°C  
lead lengths, 0.375" (9.5mm)(2)  
PM(AV)  
W
Peak forward surge current, 10ms single half sine-wave  
unidirectional only  
IFSM  
70  
A
Maximum instantaneous forward voltage at 35A for  
unidirectional only  
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +175  
°C  
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.  
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5.  
(3) 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
Document Number 88378  
22-Feb-02  
www.vishay.com  
1
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与SA6.0C/51相关器件

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SA6.0C/51-E3 VISHAY

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 		DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA6.0C/54 VISHAY

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 		Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional
SA6.0C/54-E3 VISHAY

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 		DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA6.0C/73 VISHAY

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 		Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional,
SA6.0C/73-E3 VISHAY

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 		DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA6.0C/TR12 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
SA6.0C/TR8 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
SA6.0C51 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA6.0C-51 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-204
SA6.0C51-E3 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN

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