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SA33C/TR8 PDF预览

SA33C/TR8

更新时间： 2024-11-01 19:11:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 77K
描述
Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-41, PLASTIC, DO-41, 2 PIN

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SA33C/TR8 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.69
最大击穿电压：44.9 V最小击穿电压：36.7 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-41JESD-30 代码：O-PALF-W2
JESD-609代码：e0最大非重复峰值反向功率耗散：500 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：2.5 W
认证状态：Not Qualified最大重复峰值反向电压：33 V
表面贴装：NO技术：AVALANCHE
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SA33C/TR8 数据手册

 浏览型号SA33C/TR8的Datasheet PDF文件第2页浏览型号SA33C/TR8的Datasheet PDF文件第3页浏览型号SA33C/TR8的Datasheet PDF文件第4页浏览型号SA33C/TR8的Datasheet PDF文件第5页 
8700 E. Thomas Road  
Scottsdale, AZ 85252  
Phone: (480) 941-6300  
Fax:  
(480) 947-1503  
SA5.0  
thru  
FEATURES:  
SA170A  
•
•
•
•
•
ECONOMICAL SERIES  
AVAILABLE IN BOTH UNIDIRECTIONAL AND BI-DIRECTIONAL CONSTRUCTION  
5.0 TO 170 STAND-OFF VOLTAGE AVAILABLE  
500 WATTS PEAK PULSE POWER DISSIPATION  
QUICK RESPONSE  
5.0 thru 170 volts  
500 Watts  
Transient Voltage  
Suppressors  
DESCRIPTION:  
This Transient Voltage Suppressor is an economical, molded, commercial product  
used to protect voltage sensitive components from destruction or partial degradation.  
-12  
The response time of their clamping action is virtually instantaneous (1 x 10  
seconds) and they have a peak pulse power rating of 500 watts for 1 ms as depicted in  
Figure 1 and 2. Microsemi also offers a great variety of other Transient Voltage  
Suppressor's to meet higher and lower power demands and special applications.  
DO-41  
2 x .032 ± .002  
[.81 ± .05]  
MAXIMUM RATINGS:  
Peak Pulse Power Dissipation at 25°C: 500 Watts  
Steady State Power Dissipation: 2.5 Watts at T = +75°C  
L
3/8" Lead Length  
t
(0 volts to BV Min.):  
clamping  
-12  
-9  
Unidirectional <1x10 Seconds: Bi-directional <5x10 Seconds.  
Operating and Storage Temperature: -55° to +175°C  
.107  
[2.72]  
max.  
TYPICAL CHARACTERISTIC CURVES  
100  
.205  
[5.21]  
MAX.  
POLARITY  
Mark {cathode}  
Peak Value Ipp  
100  
50  
Pulse Time Duration  
(tp) is Defined as that  
point where Ip decays  
to 50% of  
75  
50  
25  
2 X1.10  
[27.94]  
MIN.  
Peak Power  
(Single pulse)  
I surge  
Continuous  
Average Power  
Lead Length = 3/8"  
1
2
3
4
NOTE: DIMENSIONS IN [ ] =MILLIMETERS  
TIME (t) IN MILLISECONDS  
FIGURE 2  
MECHANICAL  
CHARACTERISTICS  
PULSE WAVEFORM FOR  
EXPONENTIAL SURGE  
0
50  
100  
150 175  
CASE: Void free transfer  
molded thermosetting  
plastic.  
T
LEAD TEMPERATURE °C  
FIGURE 1  
L
FINISH: Readily solderable.  
DERATING CURVE  
POLARITY: Band denotes  
cathode. Bi-directional not  
marked.  
WEIGHT: 0.7 gram (Appx.).  
MOUNTING POSITION: Any  
MSC1400.PDF 03-20-00  
12345

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与SA33C/TR8相关器件

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SA33C51 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA33C-51 VISHAY

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SA33C-51-E3 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
SA33C51-E3 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA33C54 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA33C-54 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
SA33C-54-E3 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
SA33C54-E3 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA33C73 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA33C-73-E3 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-20

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