SA33C

更新时间： 2024-11-02 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		电子二极管瞬态抑制器
页数	文件大小	规格书
4页	126K
描述
SA系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压侵害。无卤素，且符合RoHS标准典型最高温度系数ΔVBR = 0.1% x VBR@25°C 玻璃钝化结

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SA33C 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-PALF-W2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.5
其他特性：	EXCELLENT CLAMPING CAPABILITY	最大击穿电压：	44.9 V
最小击穿电压：	36.7 V	外壳连接：	ISOLATED
最大钳位电压：	59 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-15	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	260
极性：	BIDIRECTIONAL	认证状态：	Not Qualified
最大重复峰值反向电压：	33 V	子类别：	Transient Suppressors
表面贴装：	NO	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

SA33C 数据手册

Silicon Avalanche Diodes

500 Watt Axial Leaded Transient Voltage Suppressors

RoHS

SA Series

The SA Series is designed specifically to protect sensitive

electronics equipment from voltage transients induced by

lightning and other transient voltage events. These devices are

ideal for the protection of I/O interfaces, Vcc bus and other

vulnerable circuits used in computer and consumer electronic

applications.

FEATURES

• RoHS Compliant

• 5.0 to 180 Volts

• Uni-directional and Bi-directional

• Glass passivated chip junction

• 500W peak pulse power capability on 10/1000µs waveform

• Excellent clamping capability

• Repetition rate (duty cycle): 0.01%

• Low incremental surge resistance

MAXIMUM RATINGS AND CHARACTERISTICS @25˚C

AMBIENT TEMPERATURE (unless otherw ise noted)

• Fast response time: typically less than 1.0ps from 0 Volts to

BV for unidirectional and 5.0ns for bidirectional types

VALUE

SYMBOL

UNIT

RATING

Min

500

Watts

Peak Pulse Power Dissipation on

10/1000µs waveform(Note 1, FIG. 1)

• Typical IR less than 1µA above 10V

PPM

• High temperature soldering guaranteed: 265˚C/10

seconds/.375",(9.5mm) lead length, 5lbs.,(2.3kg) tension

Peak Pulse Current of on 10/1000µs

waveform (Note 1, FIG. 3)

SEE

TABLE 1

PPM

Amps

Watts

Steady State Power Dissipation at

Agency Approvals: Recognized under the Components

(AV)

T =75˚C, Lead lengths .375",

Program of Underwriters Laboratories.

(9.5mm)(Note 2)

Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed

on Rated Load, (JEDEC Method)

(Note 3)

Agency File Number: E128662

FSM

Amps

Operating junction and Storage

Temperature Range

°C

-55 to +175

j, STG

Notes:

1. Non-repetitive current pulse, per Fig.3 and derated above

T = 25˚C per Fig.2

2. Mounted on Copper Pad area of 1.6x1.6"(40x40mm)

per Fig.5.

3. 8.3 ms single half sine-wave, or equivalent square wave, Duty

cycle= 4 pulses per minutes maximum.

ORDERING INFORMATION

C A

Mechanical Specifications:

Voltage

Bi-Directional

Weight:

Case:

0.015 ounce, 0.4 gram

JEDEC DO-15 Molded Plastic over

passivated junction

5% Voltage Tolerance

Packing Option

Mounting Position:

Polarity:

Any

Color band denotes cathode except

Bidirectional

Terminal:

Plated Axial leads, solderable per

MIL-STD-750, Method 2026

B = Bulk (1000 pcs)

T = Tape and reeled (4000 pcs)

286

www. lit t elf us e. c om

12 3 4

中文翻译

下载PDF

SA33C 替代型号

型号	品牌	替代类型	描述	数据表
P6SMB39CA	LITTELFUSE	功能相似	Transient Voltage Suppression Diodes
SMA6J33CA-TR	STMICROELECTRONICS	功能相似	High junction temperature Transil TM
BZW06-33B	STMICROELECTRONICS	功能相似	TRANSIL

与SA33C相关器件

型号	品牌	获取价格	描述	数据表
SA33C.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-15
SA33C/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
SA33C/51-E3	VISHAY	获取价格	DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA33C/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
SA33C/54-E3	VISHAY	获取价格	DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA33C/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
SA33C/73-E3	VISHAY	获取价格	DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA33C/TR12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-41
SA33C/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-41
SA33C51	VISHAY	获取价格	500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN

与SA33C相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

SA33C

SA33C 技术参数

SA33C 数据手册

SA33C 替代型号

与SA33C相关器件

与SA33C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SA33C

SA33C 技术参数

SA33C 数据手册

SA33C 替代型号

与SA33C相关器件

与SA33C相关文章

您还可以找

您在本页遇到什么问题？