Datasheet > SA160-B

SA160-B

更新时间： 2025-07-21 18:45:39

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管电视
页数	文件大小	规格书
6页	1034K
描述
TVS DIODE

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中文翻译

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技术参数
数据手册

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SA160-B 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.63	击穿电压标称值：	187.5 V
最大钳位电压：	259 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	160 V
子类别：	Transient Suppressors	表面贴装：	NO
Base Number Matches：	1

SA160-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 500W > SA series

RoHS

SA Series

Description

The SA Series is designed specifically to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Bi-directional

Features

Uni-directional

• V_BR@T_J= V_BR@25°C × (1+αT • ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

x (T_J- 25))

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in DO-15 Package

• 500W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E128662/E230531

• Typical I_Rless than 1μA

above 13V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Parameter

Symbol

P_PPM

Value

500

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC (Fig. 6)

P_D

3.0

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 35A for Unidirectional

Only (Note 3)

I_FSM

15kV(Air), 8kV (Contact).

V_F

3.5/5.0

Applications

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 150

°C

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_A= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Additional Information

Functional Diagram

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 01/24/14

12 3 4 5 6

中文翻译

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与SA160-B相关器件

型号	品牌	获取价格	描述	数据表
SA160-BP	MCC	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode,
SA160-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-T	MCC	获取价格	Transient Suppressor,
SA160-T3	WTE	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-TB	WTE	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-TB-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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