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SA160

更新时间： 2024-11-25 22:50:27
品牌 Logo 应用领域
强茂 - PANJIT 二极管脉冲局域网
页数 文件大小 规格书
6页 171K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 500 Watt Peak Pulse Power)

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中文翻译

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SA160 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-15
包装说明：O-PALF-W2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.63
最大击穿电压：226 V最小击穿电压：178 V
击穿电压标称值：202 V外壳连接：ISOLATED
最大钳位电压：287 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-15JESD-30 代码：O-PALF-W2
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大重复峰值反向电压：160 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SA160 数据手册

 浏览型号SA160的Datasheet PDF文件第2页浏览型号SA160的Datasheet PDF文件第3页浏览型号SA160的Datasheet PDF文件第4页浏览型号SA160的Datasheet PDF文件第5页浏览型号SA160的Datasheet PDF文件第6页 
SA5.0 THRU SA170CA  
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR  
VOLTAGE - 5.0 TO 170 Volts  
500 Watt Peak Pulse Power  
FEATURES  
l
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
DO-15  
l
l
Glass passivated chip junction  
500W Peak Pulse Power capability on  
10/1000 £gS waveform  
l
l
l
l
Excellent clamping capability  
Repetition rate(duty cycle): 0.01%  
Low incremental surge resistance  
Fast response time: typically less  
than 1.0 ps from 0 volts to BV for unidirectional  
and 5.0ns for bidirectional types  
l
l
£g  
Typical ID less than 1 A above 10V  
High temperature soldering guaranteed:  
300 ¢J/10 seconds/.375”,(9.5mm) lead  
length/5lbs., (2.3kg) tension  
MECHANICAL DATA  
Case: JEDEC DO-15 molded plastic over passivated junction  
Terminals: Plated Axial leads, solderable per MIL-STD-750, Method 2026  
Polarity: Color band denoteds positive end(cathode) except Bidirectionals  
Mounting Position: Any  
Weight: 0.015 ounce, 0.4 gram  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA Suffix for types  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25 ¢J ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
PPPM  
VALUE  
Minimum 500  
UNITS  
Watts  
£g  
Peak Pulse Power Dissipation on 10/1000 S waveform  
(Note 1, FIG.1)  
Peak Pulse Current of on 10/1000 £gS waveform  
(Note 1, FIG.3)  
Steady State Power Dissipation at TL=75 ¢J Lead  
IPPM  
PM(AV)  
IFSM  
SEE TABLE 1  
Amps  
Watts  
Amps  
1.0  
70  
Lengths .375”,(9.5mm) (Note 2)  
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave  
Superimposed on Rated Load, Unidirectional only  
(JECED Method) (Note 3)  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-65 to +175  
¢J  
NOTES:  
¢J  
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25 per Fig. 2.  
2.Mounted on Copper Leaf area of 1.57in2(40mm2) PER Figure 5.  
3.8.3ms single half sine-wave or equivalent square wave, Duty cycle= 4 pulses per minute maximum.  
123456

中文翻译

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SA160/TR12 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160/TR8 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
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 		Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-73 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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