SA160

更新时间： 2024-11-27 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		电子局域网二极管瞬态抑制器
页数	文件大小	规格书
4页	126K
描述
SA系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压侵害。无卤素，且符合RoHS标准典型最高温度系数ΔVBR = 0.1% x VBR@25°C 玻璃钝化结

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SA160 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-PALF-W2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.49
Is Samacsys：	N	其他特性：	EXCELLENT CLAMPING CAPABILITY
最大击穿电压：	218 V	最小击穿电压：	178 V
外壳连接：	ISOLATED	最大钳位电压：	287 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-15
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
认证状态：	Not Qualified	最大重复峰值反向电压：	160 V
子类别：	Transient Suppressors	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

SA160 数据手册

Silicon Avalanche Diodes

500 Watt Axial Leaded Transient Voltage Suppressors

RoHS

SA Series

The SA Series is designed specifically to protect sensitive

electronics equipment from voltage transients induced by

lightning and other transient voltage events. These devices are

ideal for the protection of I/O interfaces, Vcc bus and other

vulnerable circuits used in computer and consumer electronic

applications.

FEATURES

• RoHS Compliant

• 5.0 to 180 Volts

• Uni-directional and Bi-directional

• Glass passivated chip junction

• 500W peak pulse power capability on 10/1000µs waveform

• Excellent clamping capability

• Repetition rate (duty cycle): 0.01%

• Low incremental surge resistance

MAXIMUM RATINGS AND CHARACTERISTICS @25˚C

AMBIENT TEMPERATURE (unless otherw ise noted)

• Fast response time: typically less than 1.0ps from 0 Volts to

BV for unidirectional and 5.0ns for bidirectional types

VALUE

SYMBOL

UNIT

RATING

Min

500

Watts

Peak Pulse Power Dissipation on

10/1000µs waveform(Note 1, FIG. 1)

• Typical IR less than 1µA above 10V

PPM

• High temperature soldering guaranteed: 265˚C/10

seconds/.375",(9.5mm) lead length, 5lbs.,(2.3kg) tension

Peak Pulse Current of on 10/1000µs

waveform (Note 1, FIG. 3)

SEE

TABLE 1

PPM

Amps

Watts

Steady State Power Dissipation at

Agency Approvals: Recognized under the Components

(AV)

T =75˚C, Lead lengths .375",

Program of Underwriters Laboratories.

(9.5mm)(Note 2)

Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed

on Rated Load, (JEDEC Method)

(Note 3)

Agency File Number: E128662

FSM

Amps

Operating junction and Storage

Temperature Range

°C

-55 to +175

j, STG

Notes:

1. Non-repetitive current pulse, per Fig.3 and derated above

T = 25˚C per Fig.2

2. Mounted on Copper Pad area of 1.6x1.6"(40x40mm)

per Fig.5.

3. 8.3 ms single half sine-wave, or equivalent square wave, Duty

cycle= 4 pulses per minutes maximum.

ORDERING INFORMATION

C A

Mechanical Specifications:

Voltage

Bi-Directional

Weight:

Case:

0.015 ounce, 0.4 gram

JEDEC DO-15 Molded Plastic over

passivated junction

5% Voltage Tolerance

Packing Option

Mounting Position:

Polarity:

Any

Color band denotes cathode except

Bidirectional

Terminal:

Plated Axial leads, solderable per

MIL-STD-750, Method 2026

B = Bulk (1000 pcs)

T = Tape and reeled (4000 pcs)

286

www. lit t elf us e. c om

12 3 4

中文翻译

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与SA160相关器件

型号	品牌	获取价格	描述	数据表
SA160(C)	GOOD-ARK	获取价格	TVS
SA160(C)A	FAIRCHILD	获取价格	DEVICES FOR BIPOLAR APPLICATIONS
SA160(C)A	GOOD-ARK	获取价格	TVS
SA160.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, DO-15
SA160/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 160V V(RWM), Unidirectional,
SA160/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 160V V(RWM), Unidirectional,
SA160/TR12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-51-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SA160-73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 500W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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