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SA12C-B PDF预览

SA12C-B

更新时间: 2024-09-25 19:31:27
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
1页 168K
描述
Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon,

SA12C-B 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.11
最大击穿电压:16.3 V最小击穿电压:13.3 V
外壳连接:ISOLATED最大钳位电压:22 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL认证状态:Not Qualified
最大反向电流:3 µA表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SA12C-B 数据手册

  

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