Datasheet > SA120A-G

SA120A-G

更新时间： 2024-01-17 13:55:30

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
7页	139K
描述
Transient Suppressor,

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技术参数
数据手册

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SA120A-G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	Reach Compliance Code：	unknown
风险等级：	5.46	其他特性：	UL RECOGNIZED
最大击穿电压：	147 V	最小击穿电压：	133 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-15	JESD-30 代码：	O-PALF-W2
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	3 W
认证状态：	Not Qualified	最大重复峰值反向电压：	120 V
表面贴装：	NO	技术：	AVALANCHE
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED

SA120A-G 数据手册

Axial Lead Transient Voltage Suppressor

SA5V0-G Thru. SA191-G Series

Working Peak Reverse Voltage: 5.0 to 190 Volts

Peak Pulse Power: 500 Watts

RoHS Device

Features

-Glass passivated chip.

DO-15

0.033(0.84)

0.028(0.71)

-Low leakage.

1.000(25.40)

MIN.

-500W peak pulse power capability with a

10/1000μs waveform, repetitive rate (duty

cycle): 0.01%.

-Uni and Bidirectional unit.

-Excellent clamping capability.

0.300(7.63)

0.230(5.85)

-Very fast response time.

-RoHS compliant.

0.142(3.61)

0.102(2.60)

Mechanical data

1.000(25.40)

MIN.

-Case: Molded plastic DO-15

-Epoxy: UL 94V-0 rate flame retardant

Dimensions in inches and (millimeter)

-Terminals: Axial leads solderable per MIL-STD-

202, Method 208

-Polarity: Color band denotes positive end

(cathode)

-Mounting position: Any

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Value

Characteristics

Symbol

Units

Peak power dissipation with a 10/1000μS

waveform (Note 1)

PPP

500

Peak pulse current with a 10/1000μS

IPPM

See Next Table

3.0

waveform (Note 1)

Power dissipation on infinite heatsink at

TL=75 ^OC

Peak forward surge current, 8.3ms single

half sine-wave uni-directional only (Note 2)

IFSM

Maximum instantaneous forward voltage

at 25A for uni-directional only (Note 3)

3.5/5.0

Operating junction and storage temperature

range

^OC

TJ,TSTG

-55 to +150

NTOES:

(1) Non-repetitive current pulse per fig.5 and derated above TA=25°C per fig. 1.

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.

REV:A

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