Datasheet > S9251-02

S9251-02

更新时间： 2024-02-14 12:07:43

品牌	Logo	应用领域
HAMAMATSU		光电二极管
页数	文件大小	规格书
2页	76K
描述
Si APD High sensitivity in near IR range

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中文翻译

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技术参数
数据手册

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S9251-02 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TO-18, 3 PIN	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.59
配置：	SINGLE	最大暗电源：	1 nA
红外线范围：	YES	功能数量：	1
最高工作温度：	85 °C	最低工作温度：	-20 °C
光电设备类型：	AVALANCHE PHOTODIODE	峰值波长：	860 nm
形状：	ROUND	尺寸：	3 mm
Base Number Matches：	1

S9251-02 数据手册

P H O T O D I O D E

Si APD

S9251 series

High sensitivity in near IR range (λ=900 nm)

Features

Applications

High sensitivity in near IR range (λ=900 nm)

Rangefinder

Operational stability

Spatial light transmission

ꢀꢀGeneral ratings / Absolute maximum ratings

Absolute maximum ratings

Dimensional

outline/

Effective *²

active area size

Effective

active area

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Package

Window

material *¹

(mm)

φ0.2

φ0.5

φ1.0

φ1.5

(mm²)

0.03

0.19

0.78

1.77

(°C)

S9251-02

S9251-05

S9251-10

S9251-15

ꢀ/K

TO-18

TO-5

-20 to +85

-55 to +125

ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Excess*³

noise

figure

Breakdown

voltage

Photo

sensitivity efficiency

Quantum

Peak *³

sensitivity

wavelength

λp

Dark *³Cut-off

Spectral

response

range

Temp

coefficient

Terminal *³

capacitance

Gain

current frequency

VBR

M=1

ID=100 µA of VBR

=900 nm

Type No.

L=50

Ω

=900 nm

λ=900 nm λ=900 nm

Typ. Max.

(nm)

860

(A/W)

0.52

(%)

(V) (V) (V/°C) (nA) (nA) (MHz)

(pF)

0.4

0.7

1.9

3.6

S9251-02

S9251-05

S9251-10

S9251-15

0.1

0.2

0.4

0.8

400

440 to

1100

250 350

1.85

0.3

100

380

350

*1: K: borosilicate glass

*2: Area in which a typical gain can be obtained.

*3: Values measured at a gain listed in the characteristics table.

中文翻译

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