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S9015L-G PDF预览

S9015L-G

更新时间: 2024-11-01 13:13:11
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
4页 856K
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S9015L-G 数据手册

 浏览型号S9015L-G的Datasheet PDF文件第2页浏览型号S9015L-G的Datasheet PDF文件第3页浏览型号S9015L-G的Datasheet PDF文件第4页 
S9015  
PNP General Purpose Transistors  
TO-92  
1. EMITTER  
2. BASE  
3. COLLECTOR  
1
2
3
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
Value  
-45  
-50  
V
CEO  
V
CBO  
V
-5.0  
100  
EBO  
I
C
P
0.4  
Total Device Dissipation T =25 C  
W
C
A
D
150  
Junction Temperature  
Storage, Temperature  
T
j
-55 to +150  
Tstg  
C
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = -1 mAdc, I =0)  
V
-45  
Vdc  
C
B
(BR)CEO  
-
-
-50  
Vdc  
Vdc  
Collector-Base Breakdown Voltage (I = -100uAdc, I =0)  
V
V
C
E
(BR)CBO  
-5.0  
Emitter-Base Breakdown Voltage (I = -100 uAdc, I =0)  
(BR)EBO  
E
C
-
-
I
uAdc  
uAdc  
-0.05  
-0.05  
Collector Cutoff Current (V = -50 Vdc, I =0)  
CBO  
CB  
E
I
d
Emitter Cutoff Current (V = -5.0V c, I =0)  
EBO  
EB  
C
WEITRON  
http://www.weitron.com.tw  

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