S9015L

更新时间： 2024-11-20 13:13:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	201K
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数据手册

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S9015L 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

S9015M

TRANSISTOR

WBFBP-03B

DESCRIPTION

PNP Epitaxial Silicon Transistor

(1.2×1.2×0.5)

unit: mm

TOP

FEATURES

High h_FEand good linearity

Complementary to S9014M

1. BASE

2. EMITTER

3. COLLECTOR

BACK

APPLICATION

Low Frequency, Low Noise Amplifier

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: M7

MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-45

V_CEO

V_EBO

I_C

-5

Collector Current -Continuous

Collector Dissipation

-0.1

P_C

0.15

150

℃

T_J

Junction Temperature

Storage Temperature

T_stg

-55-150

ELECTRICAL CHARACTERISTICS(Ta=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-50

-45

-5

I_C= -100μA, I_E=0

I_C= -0.1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-50 V , I_E=0

-0.1

1000

-0.3

-1

μA

Emitter cut-off current

I_EBO

V_EB= -5V ,

I_C=0

DC current gain

h_FE

V_CE=-5V, I_C= -1mA

I_C=-100 mA, I_B= -10mA

I_C=-100 mA, I_B=-10mA

V_CE=-5V, I_C= -10mA

f=30MHz

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Transition frequency

Collector output capacitance

Noise figure

MHz

f_T

C_obo

V_CB=-10V,I_E=0,f=1MHz

V_CE=-5V,I_c=-0.2mA,

f=1KHz,R_S=2KΩ

12 3

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