Datasheet > S9014

S9014

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	254K
描述
Low Level & Low Noise

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数据手册

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S9014 数据手册

S9014

NPN Silicon

Elektronische Bauelemente

Pre-Amplifier, Low Level & Low Noise

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

FEATURES

Collector

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Power dissipation

Base

PCM : 0.2 W

Collector Current

ICM : 0.1 A

Emitter

Collector-base voltage

V(BR)CBO : 50 V

Top View

Operating & storage junction temperature

Tj, Tstg : - 55^OC ~ + 150^OC

All Dimension in mm

ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= 100μA， I_E=0

Ic= 0.1mA， I_B=0

I_E=100μA， I_C=0

V_CB=50 V , I_E=0

V_CE=35V , I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

μA

Collector cut-off current

I_CEO

0.1

1000

0.3

Emitter cut-off current

I_EBO

V_EB= 3V ,

I_C=0

DC current gain

h_FE

V_CE=5V, I_C= 1mA

I_C=100 mA, I_B= 5mA

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=5V, I_C= 10mA

f=30MHz

Transition frequency

150

MHz

f_T

CLASSIFICATION OF h_FE(1)

Rank

Range

200-450

450-1000

DEVICE MARKING: S9014 =J6

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2004 Rev. B

Page 1 of 2

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