Datasheet > S9014

S9014

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	761K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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S9014 数据手册

S9014

TRANSISTOR (NPN)

SOT-23

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Complementary to S9015

MARKING: J6

unless otherwise noted)

MAXIMUM RATINGS (T_A=25℃

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.1

P_C

0.2

℃

T_j

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA, I_E=0

I_C= 0.1mA, I_B=0

I_E=100μA, I_C=0

V_CB=50 V , I_E=0

V_CE=35V , I_B=0

V_EB= 3V , I_C=0

V_CE=5V, I_C= 1mA

I_C=100 mA, I_B= 5mA

0.1

1000

0.3

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=5V, I_C= 10mA

f=30MHz

Transition frequency

f_T

MHz

CLASSIFICATION OF h_FE

Rank

200-450

450-1000

Range

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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